BFT45 Philips Semiconductors, BFT45 Datasheet - Page 3

• Manufacturer Part Number: BFT45
• Description: PNP high-voltage transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Note
1. Pulse test: t
1997 Apr 18
V
V
V
I
I
I
P
T
T
T
R
R
I
I
h
V
V
C
f
SYMBOL
SYMBOL
SYMBOL
j
C
CM
BM
CBO
EBO
T
FE
stg
j
amb
CBO
CEO
EBO
tot
= 25 C unless otherwise specified.
CEsat
BEsat
PNP high-voltage transistor
th j-a
th j-c
c
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
transition frequency
p
300 s;
PARAMETER
PARAMETER
PARAMETER
0.02.
I
I
I
I
I
I
I
I
I
I
I
I
E
C
C
C
C
C
C
C
C
C
C
E
C
= 0; V
= i
= 0; V
= 1 mA; V
= 10 mA; V
= 100 mA; V
= 10 mA; I
= 100 mA; I
= 500 mA; I
= 10 mA; I
= 100 mA; I
= 500 mA; I
= 15 mA; V
e
= 0; V
CB
EB
open emitter
open base
open collector
T
3
case
= 200 V
= 3 V
CB
CONDITIONS
CE
B
B
CE
CE
B
B
B
B
= 20 V; f = 1 MHz
= 1 mA
= 1 mA
50 C
CE
= 10 V
CONDITIONS
CONDITIONS
= 10 mA
= 100 mA; note 1
= 10 mA
= 100 mA; note 1
= 10 V
= 10 V; f = 100 MHz
= 10 V; note 1
30
50
50
MIN.
65
65
MIN.
VALUE
200
30
70
Product specification
TYP. MAX. UNIT
5
+150
200
+150
MAX.
250
250
5
500
1
200
150
15
BFT45
5
5
0.5
1.4
3
0.5
0.9
1.2
UNIT
K/W
K/W
V
V
V
mA
A
mA
W
C
C
C
UNIT
V
V
V
V
V
V
pF
MHz
A
A