PN5019 Micross, PN5019 Datasheet
PN5019
Manufacturer Part Number
PN5019
Description
Switching
Manufacturer
Micross
Datasheet
1.PN5019.pdf
(1 pages)
PN5019 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
PN5019 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
PN5019 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SWITCHING TEST CIRCUIT
PN5019 SWITCHING CIRCUIT PARAMETERS
PN5019 Benefits:
Note 1 ‐ Absolute maximum ratings are limiting values above which PN5019 serviceability may be impaired.
Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
Micross Components Europe
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
This p-channel analog switch is designed to provide low
on-resistance and fast switching.
The TO-92 provides a low cost option and ease of
manufacturing.
(See Packaging Information).
PN5019 Applications:
SYMBOL
SYMBOL
SYMBOL
V
V
r
r
BV
I
t
t
I
I
DS(on)
DS(on)
V
GS(off)
DS(on)
I
I
D(off)
C
V
D(on)
C
d(on)
d(off)
DGO
R
DSS
GSS
R
t
t
iss
rss
DD
GG
GSS
r
f
G
L
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Low Insertion Loss
No offset or error voltage generated by closed
switch
Purely resistive
Analog Switches
Commutators
Choppers
Click To Buy
Linear Systems replaces discontinued Siliconix PN5019
Drain to Source Saturation Current (Note 2)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Gate to Source Breakdown Voltage
1.8kΩ
390Ω
‐3mA
‐6V
8V
Drain to Source On Resistance
Drain to Source On Resistance
Gate to Source Cutoff Voltage
Reverse Transfer Capacitance
Drain to Source On Voltage
Turn On Rise Time
Turn Off Fall Time
CHARACTERISTIC
Drain Reverse Current
Turn Off Time
Gate Reverse Current
Turn On Time
The PN5019 is a single P-Channel JFET switch
Drain Cutoff Current
Input Capacitance
CHARACTERISTIC
CHARACTERISTIC
Available Packages:
PN5019 in TO-92
PN5019 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email:
Web:
http://www.micross.com/distribution
chipcomponents@micross.com
P-CHANNEL JFET
100
15
75
25
PN5019
MIN
MIN
30
UNITS
‐5
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PN5019
ZERO OFFSET VOLTAGE
LOW ON RESISTANCE
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
ns
TO-92 (Bottom View)
TYP.
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
chipcomponents@micross.com
MAX
MAX
‐0.5
150
150
‐10
‐10
45
10
‐2
‐‐
‐‐
5
2
UNITS
UNITS
mA
nA
µA
nA
pF
V
Ω
Ω
See Switching Circuit
CONDITIONS
V
V
GS
GS
Web:
(H) = 0V
(L) = 7V
V
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V
I
DS
D
DS
= 0A, V
= ‐15V, V
= 0V, V
V
V
I
V
V
V
V
I
D
V
DS
DS
G
DS
DS
GS
GS
= ‐1mA, V
DG
= 1µA, V
= ‐15V, V
= ‐15V, I
= ‐20V, V
= ‐15V, V
CONDITIONS
CONDITIONS
= 0V, I
= 15V, V
= ‐15V, I
GS
GS
GS
= 0V, f = 1kHz
‐55°C to +200°C
‐55°C to +200°C
= 7V, f = 1MHz
= 0V, f = 1MHz
r
D
DS(on)
I
V
= ‐3mA
V
D
G
DS
GS
500mW
= ‐1µA
DS
= ‐50mA
GDS
GSS
GS
GS
GS
S
= 0V
= 0V
= 0A
= 12V
= 0V
= 0V
= 7V
= 30V
= 30V
≤ 150Ω