SGM2014 Sony Corporation, SGM2014 Datasheet - Page 3

• Manufacturer Part Number: SGM2014
• Description: GaAs N-channel Dual Gate MES FET
• Manufacturer: Sony Corporation

3.0
2.5
2.0
1.5
1.0
0.5
25
20
15
10
5
0
6
5
4
3
2
1
0
0
–2.0
–1.8
0
(V
(V
(V
–1.6
DS
2
DS
DS
V
V
= 5V, f = 900MHz)
= 5V, V
= 5V)
–1.4
G2S
G1S
4
–1.5
– Gate 2 to source voltage [V]
– Gate 1 to source voltage [V]
–1.2
6
I
D
G2S
– Drain current [mA]
NF, Ga vs. I
8
–1.0
NF vs. V
I
= 1.5V, f = 900MHz)
D
10
vs. V
–1.0
–0.8
12
G2S
–0.6
G1S
Ga
NF
V
14
G2S
D
–0.4
–0.5
16
= 0.5V
–0.2 0
18
1.0V
1.5V
20 22
0.2
0
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
30
25
20
15
10
5
0
V
= 0V
G1S
– 3 –
3.0
2.5
2.0
1.5
1.0
0.5
25
20
15
10
25
20
15
10
5
0
5
0
0
–2.0
–1.8
0
(V
(V
–1.6
0.2
DS
DS
V
V
= 5V)
= 5V, f = 900MHz)
NFmin
0.4
–1.4
G1S
G1S
(V
–1.5
DS
0.6
– Gate 1 to source voltage [V]
– Gate 1 to source voltage [V]
–1.2
= 5V, V
f – Frequency [GHz]
0.8
Ga
–1.0
gm vs. V
Ga vs. V
NF, Ga vs. f
1.0
G2S
–1.0
–0.8
1.2
= 1.5V, I
–0.6
G1S
G1S
1.4
–0.4
D
1.6
V
–0.5
G2S
= 10mA)
–0.2 0
1.8
= 1.5V
0.5V
1.0V
SGM2014AM
2.0
0.2
2.2
0
V
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
30
25
20
15
10
5
0
G2S