SGM2013 Sony Corporation, SGM2013 Datasheet - Page 2

• Manufacturer Part Number: SGM2013
• Description: GaAs N-channel Dual-Gate MES FET
• Manufacturer: Sony Corporation

Typical Characteristics (Ta = 25°C)
Electrical Characteristics
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off
voltage
Gate 2 to source cut-off
voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
20
16
12
8
4
0
0
(V
G2S
= 0.5V)
1
V
Item
DS
– Drain to source voltage [V]
2
I
D
vs. V
3
DS
4
I
I
I
V
(OFF)
V
(OFF)
gm
Ciss
Crss
NF
Ga
G1SS
G2SS
DSS
Symbol
G1S
G2S
5
6
V
V
V
V
V
V
V
V
V
V
I
V
V
I
V
V
I
V
f = 1kHz
V
I
V
f = 1MHz
V
I
V
f = 900MHz
–0.2V
V
= 0V
–0.4V
–0.6V
–0.8V
–1.0V
D
D
D
D
D
G1S
G2S
DS
G2S
G1S
DS
DS
G1S
G2S
DS
G2S
DS
G1S
DS
G2S
DS
G2S
DS
G2S
G1S
= 100µA
= 100µA
= 2mA
= 2mA
= 2mA
= 0V
= 0V
= 2V
= 2V
= 2V
= 2V
= 2V
= 2V
= –3V
= 0V
= –3V
= 0V
= 0V
= 0V
= 0V
= 0V
= 0.5V
= 0.5V
= 0.5V
– 2 –
Conditions
20
16
12
8
4
0
–2.0
(V
DS
= 2V)
V
G1S
–1.5
– Gate 1 to source voltage [V]
Min.
15
4
8
I
D
vs. V
–1.0
Typ.
0.55
1.4
G1S
11
15
18
–0.5
Max.
–1.5
–1.5
2.5
–4
–4
16
30
1
(Ta = 25°C)
SGM2013N
0
Unit
mA
ms
µA
µA
dB
dB
V
= 0.5V
0.25V
0V
–0.25V
–0.5V
–0.75V
–1.0V
pF
fF
V
V
G2S