GT35J321 Toshiba, GT35J321 Datasheet - Page 4

• Manufacturer Part Number: GT35J321
• Description: Fourth Generation IGBT
• Manufacturer: Toshiba

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1000
0.01
500
400
300
200
100
100
0.1
0.1
10
10
1
1
0
1
1
0
(continuous)
I C max (pulsed) *
I C max
Common emitter
V CC = 300 V
I C = 50 A
V GG = ±15 V
Tc = 25°C
DC operation
V CE = 300 V
Collector-emitter voltage V
80
200
10
Gate resistance R
Gate charge Q
100
Switching Time – R
Safe Operating Area
10
V
CE,
160
10 ms*
V
100
GE
1 ms*
– Q
240
G
*: Single non-repetitive
Curves must be derated
linearly with increases in
temperature.
G
pulse
100
G
10 μs*
(nC)
G
CE
(Ω)
Common emitter
R L = 6 Ω
Tc = 25°C
1000
100 μs*
320
Tc = 25°C
(V)
t off
t on
t r
t f
10000
1000
400
20
16
12
8
4
0
4
10000
1000
1000
0.01
100
100
0.1
0.1
10
10
10
1
1
1
0
1
Common emitter
V CC = 300 V
R G = 39 Ω
V GG = ±15 V
Tc = 25°C
Common emitter
V GE = 0 V
f = 1 MHz
Tc = 25°C
10
Collector-emitter voltage V
Collector-emitter voltage V
10
Collector current I
t r
Switching Time – I
Reverse Bias SOA
10
20
t on
C – V
100
30
CE
C
100
t off
40
t f
C
CE
CE
(A)
1000
T j ≤ 125°C
V GG = 20 V
R G = 39 Ω
(V)
(V)
50
C oes
C ies
C res
GT35J321
2008-03-26
10000
1000
60