GT6924E GTM, GT6924E Datasheet

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GT6924E

Manufacturer Part Number
GT6924E
Description
N-CHANNEL MOSFET
Manufacturer
GTM
Datasheet
1.GT6924E.pdf (4 pages)
www.DataSheet4U.com
G
N
Description
The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Lower on-resistance
*Fast Switching Characteristic
*Included Schottky Diode
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Reverse Voltage
Average Forward Current
Pulsed Forward Current
Total Power Dissipation
Total Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-ambient
Thermal Resistance Junction-ambient
GT6924E
G
N
-
-
C
C
T
T
H
H
6
6
A
A
N
N
9
9
N
N
2
2
E
E
L
L
Parameter
Parameter
4
4
(Schottky)
M
M
E
E
O
1
O
(MOSFET)
(MOSFET)
(MOSFET)
S
S
1
(MOSFET)
(Schottky)
F
F
(Schottky)
3
3
(Schottky)
(MOSFET)
(MOSFET)
E
E
T
T
3
3
(MOSFET) M
(Schottky)
W
W
I
I
T
T
H
H
M
ax.
ax.
S
S
C
C
P
I
I
H
H
D
D
D
O
O
@T
@T
Symbol
Symbol
@T
Tj, Tstg
Rthj-a
T
T
V
V
V
I
I
DM
I
FM
A
A
T
GS
T
DS
KA
F
A
=25 :
=70 :
=25 :
K
K
Y
Y
D
D
I
I
O
O
D
D
E
E
-55 ~ +125
Ratings
REF.
Value
C
D
110
110
A
B
E
F
± 6
1.0
0.8
0.5
2.0
0.9
0.9
20
20
8
Min.
2.70
2.60
1.40
0.30
0°
0
Millimeter
Pb Free Plating Product
Max.
3.10
3.00
1.80
0.55
0.10
10°
BV
R
I
D
DS(ON)
ISSUED DATE :2006/01/25
REVISED DATE :
REF.
DSS
G
H
K
J
L
I
Unit
Unit
: /W
: /W
Dimensions
W
W
V
V
A
A
A
V
A
A
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Millimeter
:
Page: 1/4
600m
20V
1A

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GT6924E Summary of contents

Page 1

... Reverse Voltage (Schottky) Average Forward Current 1 Pulsed Forward Current (Schottky) Total Power Dissipation (MOSFET) Total Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient GT6924E ...

Page 2

... Source-Drain Diode Parameter 2 Forward On Voltage Schottky Characteristics ( Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2 Surface mounted GT6924E Symbol Min. Typ DSS - 0. DSS 0 ...

Page 3

... MOSFET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GT6924E ISSUED DATE :2006/01/25 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ...

Page 4

... Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GT6924E Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. ...

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