GT6301K GTM, GT6301K Datasheet
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Manufacturer Part Number
GT6301K
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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G
N
Description
The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT6301K is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-ambient
GT6301K
G
N
-
-
C
C
T
T
H
H
6
6
A
A
N
N
3
3
N
N
0
0
E
E
L
L
Parameter
Parameter
1
1
E
E
K
K
N
N
1,2
H
H
A
A
3
3
, V
, V
N
N
C
GS
GS
C
E
E
@10V
@10V
M
M
E
E
N
N
3
Max.
T
T
M
M
P
I
I
O
O
D
D
D
@T
@T
D
D
Symbol
Symbol
@T
Tj, Tstg
Rthj-a
E
E
V
V
I
DM
A
A
GS
DS
A
=25 :
=70 :
=25 :
P
P
O
O
W
W
E
E
R
R
M
M
-55 ~ +150
O
O
Ratings
REF.
Value
S
S
0.01
±16
640
500
950
C
D
110
A
B
E
F
1.2
30
F
F
E
E
T
T
Min.
2.70
2.60
1.40
0.30
0°
0
Millimeter
Pb Free Plating Product
Max.
3.10
3.00
1.80
0.55
0.10
10°
BV
R
I
D
DS(ON)
ISSUED DATE :2006/01/09
REVISED DATE :
REF.
DSS
G
H
K
J
L
I
W/ :
Unit
Unit
: /W
mA
mA
mA
Dimensions
W
V
V
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Millimeter
:
Page: 1/4
640mA
30V
1
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GT6301K Summary of contents
... Description The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GT6301K is universally used for all commercial-industrial applications. Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions Absolute Maximum Ratings ...
... Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter 2 Forward On Voltage Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle Surface mounted GT6301K Symbol Min. Typ DSS - 0. DSS ...
... Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GT6301K ISSUED DATE :2006/01/09 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ...
... Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GT6301K Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform ...
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