GT60M323 Toshiba, GT60M323 Datasheet
GT60M323
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GT60M323 Summary of contents
Page 1
... T −55 to 150 °C stg Symbol Max Unit R 0.625 °C/W th (j-c) R 4.0 °C/W th (j-c) Marking TOSHIBA GT60M323 JAPAN 1 GT60M323 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2004-07-06 ...
Page 2
... di/dt = −20 A/µ 90 90% 10 (off off 2 GT60M323 Min Typ. Max Unit ― ― ±500 nA ― ― 0.1 mA 4.0 ― 7.0 V ― 2.3 2.8 V ― 4200 ― pF ― 0.25 ― ― 0.37 ― µs ― ...
Page 3
... Tc = 25° Collector-emitter voltage Common emitter 125° Gate-emitter voltage 140 3 GT60M323 – – − 2004-07-06 ...
Page 4
... Collector current I C (A) Reverse Bias SOA 1000 100 10 1 10000 1 10 Collector-emitter voltage V CE (V) 4 GT60M323 CE Common emitter C ies MHz Tc = 25°C C oes C res 100 1000 10000 < = 125° Ω ...
Page 5
... Pulse width 1.6 Common Collector di/dt = −20 A/µ 25°C 1.4 1.2 1.0 0.8 2 Forward current 180 5 GT60M323 – Diode stage IGBT stage − – ...
Page 6
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 GT60M323 030619EAA 2004-07-06 ...