GT8G132 Toshiba Semiconductor, GT8G132 Datasheet
GT8G132
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GT8G132 Summary of contents
Page 1
... V 6 GES Pulse V 8 GES 150 CP (Note 150 j T 55~150 stg 2 1 GT8G132 Unit JEDEC ― W JEITA ― °C TOSHIBA 2-6J1C °C Weight: 0.080 g (typ.) 1.5 t] Equivalent Circuit 2002-05-17 www.DataSheet4U www.DataSheet www.DataSheet www.DataSheet ...
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... Month (Starting from Alphabet A) Year (Last Number of the Christian Era) 2 Min Typ 0 2 MHz 2800 GE 1.0 51 1.1 1.6 300 V 1% 2.2 1.5 t] GT8G132 Max Unit 1 114 °C/W 2002-05-17 www.DataSheet4U www.DataSheet www.DataSheet www.DataSheet 4U.com 4U 4U .com .com .com ...
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... C CE 4.0 3.5 3 2.5 V Common emitter Tc 70° – 125 Common emitter ( GT8G132 I – 200 4.0 3.0 160 3.5 4.5 5.0 120 Common emitter Tc 25° Collector-emitter voltage V CE (V) I – 200 4 ...
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... Gate-emitter voltage V GE (V) C – 10000 C ies 1000 C oes 100 Common emitter C res MHz Tc 25° 100 Collector-emitter voltage V CE (V) GT8G132 5 5 1000 2002-05-17 www.DataSheet www.DataSheet4U www.DataSheet www.DataSheet 4U 4U.com 4U .com .com .com ...
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... CP t off t f Common emitter V CC 300 25°C 100 150 200 GT8G132 – 500 400 300 200 V GE Common emitter 100 V CC 300 2 25° ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 6 GT8G132 000707EAA 2002-05-17 www.DataSheet www.DataSheet4U www ...