GT8G131 Toshiba Semiconductor, GT8G131 Datasheet - Page 5

• Manufacturer Part Number: GT8G131
• Description: N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
• Manufacturer: Toshiba Semiconductor

200
160
120
0.3
0.1
10
80
40
20
10
3
1
0
5
3
1
10
0
0
Common emitter
V CE = 300 V
V GE = 4 V
I C = 150 A
Tc = 25°C
t on
t f
Gate-emitter voltage V GE (V)
Minimum Gate Drive Area
50
Gate resistance R G (9)
2
Collector current I C (A)
Tc = 25°C
Switching Time – R
Switching Time – I
30
t on
t r
t off
t f
70°C
50
100
4
t off
100
Common emitter
V CE = 300 V
V GE = 4 V
R G = 51 W
Tc = 25°C
C
G
t r
150
6
300
200
8
5
800
600
400
200
500
400
300
200
100
0
0
0
0
Common emitter
V CE = 300 V
R L = 2.0 W
Tc = 25°C
V CM = 350 V
Tc < = 70°C
V GE = 4 V
20 W < = R G < = 200 W
40
Peak collector current I CP (A)
Maximum Operating Area
20
Gate charge Q G (nC)
V GE
V
CE
80
, V
40
GE
V CE
– Q
120
G
60
160
GT8G131
2003-03-18
200
80
10
8
6
4
2
0