TIG110GMH Sanyo Semicon Device, TIG110GMH Datasheet - Page 2

• Manufacturer Part Number: TIG110GMH
• Description: N-Channel Non Punch Through IGBT
• Manufacturer: Sanyo Semicon Device

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Electrical Characteristics at Tj=25°C, Unless otherwise specifi ed
Thermal Characteristics at Ta=25°C, Unless otherwise specifi ed
Switching Time Test Circuit
Timing Chart
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-ON Time
Turn-OFF Delay Time
Fall Time
Turn-OFF Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Thermal Resistance (Junction- Case)
Thermal Resistance (Junction- at mosphere)
Parameter
Parameter
0
0
15V
0V
V GE
V CE
I C
V GE
V (BR)CES
I CES
I GES
V GE (off)
V CE (sat)1
V CE (sat)2
Cies
Coes
Cres
t d (on)
t r
t on
t d (off)
t f
t off
Qg
Qgs
Qgd
Rth(j-c)
Rth(j-a)
R G
Symbol
Symbol
TIG110GMH
90%
10%
t d (off)
90%
t off
t f
L=200μH, V GE =15V, I C =15A, V CC =300V,
R g =30Ω, See specifi ed Test Circuit.
I C =1mA, V GE =0V
V CE =600V, V GE =0V
V GE =±30V, V CE =0V
V CE =10V, I C =1mA
V GE =15V, I C =15A
V GE =15V, I C =40A
V CE =30V, f=1MHz
V CE =300V, V GE =15V, I C =15A
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
10%
TIG110GMH
V CLAMP =600V
Diode
Conditions
Conditions
L
10%
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
10%
t d (on)
V CC
t r
t on
90%
10%
IT16383
min
min
600
4.0
Ratings
Ratings
typ
typ
2880
1.75
300
250
120
450
5.0
1.6
2.2
45
38
65
30
95
20
30
max
max
±100
2.08
41.7
100
6.0
2.0
1
No.9018-2/5
°C / W
°C / W
Unit
Unit
mA
μA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
V
V
V
V
V
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