TIG064E8 Sanyo Semicon Device, TIG064E8 Datasheet - Page 2

• Manufacturer Part Number: TIG064E8
• Description: N-Channel IGBT
• Manufacturer: Sanyo Semicon Device

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Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7011A-004
Fig.1 Large Current R Load Switching Circuit
Note1. Gate Series Resistance R G ≥ 160 Ω is recommended for protection purpose at the time of turn OFF. However,
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
if dv / dt ≤ 400V / μs is satisfi ed at customer’s actual set evaluation, R G < 160 Ω can also be used.
V GE
1
8
Parameter
0.65
Bot t om View
Top View
2.9
R G
5
4
0.3
100kΩ
R L
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : ECH8
0.15
TIG064E8
V (BR)CES
I CES
I GES
Cies
Coes
Cres
V GE (off)
V CE (sat)
Symbol
0 t o 0.02
C M
I C =2mA, V GE =0V
V CE =320V, V GE =0V
V GE =±4V, V CE =0V
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CE =10V, I C =1mA
I C =100A, V GE =2.5V
+
TIG064E8
V CC
Conditions
Electrical Connection
8
1
7
2
6
3
min
400
0.4
5
4
Ratings
typ
3100
4.2
30
23
Top view
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
max
±10
0.9
10
No. A1602-2/5
7
Unit
μA
μA
pF
pF
pF
V
V
V
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