TIG062E8 Sanyo Semicon Device, TIG062E8 Datasheet - Page 4

• Manufacturer Part Number: TIG062E8
• Description: N-Channel IGBT
• Manufacturer: Sanyo Semicon Device

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1000
100
160
140
120
100
300
250
200
150
100
80
60
40
20
50
5
3
2
7
5
3
2
7
5
3
2
0
0
2
0
0
V CE =320V
C M =100μF
V GE =3.3V
V CE =320V
3
20
1
Collector Current (Pulse)2, I CP 2 -- A
Gate-to-Emitter Voltage, V GE -- V
Gate Series Resistance, R G -- Ω
5
40
SW Time -- R G
7
2
C M -- I CP 2
I CP -- V GE
60
Tc=70 ° C
100
Tc=25 ° C
80
3
2
100
Tc=70 ° C
Tc=25 ° C
4
3
Test circuit Fig.1
V GE =3V
V CC =320V
I CP =100A
C M =150μF
PW=50μs
120
5
5
140
IT14706
IT14708
IT14710
7
1000
160
TIG062E8
6
800
700
600
500
400
300
200
100
300
250
200
150
100
300
250
200
150
100
50
50
0
0
0
0
0
0
V GE =3V
V CE =320V
V GE =4V
V CE =320V
50
20
20
Collector Current (Pulse)1, I CP 1 -- A
Collector Current (Pulse)3, I CP 3 -- A
100
Gate Series Resistance, R G -- Ω
40
40
150
Tc=70 ° C
dv / dt -- R G
C M -- I CP 1
C M -- I CP 3
60
60
200
250
Tc=70 ° C
80
80
Tc=25 ° C
300
100
100
350
Test circuit Fig.1
V GE =3V
V CC =320V
I CP =100A
PW=50μs
Tc=25 ° C
120
120
400
No. A1480-4/5
140
140
450
IT14707
IT14709
IT14711
500
160
160
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