TIG030TS Sanyo Semicon Device, TIG030TS Datasheet - Page 2

• Manufacturer Part Number: TIG030TS
• Description: N-Channel IGBT Light-Controlling Flash Applications
• Manufacturer: Sanyo Semicon Device

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Package Dimensions
unit : mm (typ)
7006A-007
Large Current R Load Screening Circuit
Note1. Gate Series Resistance R G ≥50Ω is recommended for prolection purpose at the time of turn OFF. However,
Note2. The collector voltage gradient dv / dt must be smaller than 400V / µs to protect the device when it is turned off.
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4V
0V
if dv/dt≤400V/µs is satisfied at customer’s actual set evaluation, R G <50Ω can also be used.
R G ≥50Ω
8
1
3.0
Parameter
0.65
R L =2.0Ω
100kΩ
5
4
0.25
0.125
TIG030TS
C M =400µF
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
SANYO : TSSOP8
V CE (sat)
V GE (off)
Symbol
Coes
Cres
Cies
+
V CE =10V, I C =1mA
I C =150A, V GE =4V
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CC =320V
TIG030TS
Conditions
Electrical Connection
8
1
7
2
6
3
5
4
min
0.5
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
Top view
Ratings
typ
2610
3.7
59
36
max
1.2
5.4
No. A0637-2/4
Unit
pF
pF
pF
V
V