AN1923 Motorola / Freescale Semiconductor, AN1923 Datasheet

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AN1923

Manufacturer Part Number
AN1923
Description
AN1923 Application Note Mounting Method with Mechanical Fasteners for the MRF19090 and Similar Packages
Manufacturer
Motorola / Freescale Semiconductor
Datasheet
1.AN1923.pdf (8 pages)
SEMICONDUCTOR APPLICATION NOTE
Prepared by: Wendi Stemmons, Jerry Mason, Rich Wetz, Tom Woods and Mahesh Shah
INTRODUCTION
90–Watt power device.
recommended for any ceramic/metal flange device with
similar materials and construction (copper tungsten flange
with ceramic insulator and Alloy–42 leads) and up to 90 Watts
output power. This mounting method involves bolt–down of
the CuW flange to a heatsink with the leads soldered to a
printed circuit board (PCB). Critical elements that must be
carefully addressed are mechanical stress of the assembly
and thermal management. The mounting method described
has adequately taken these issues into account. A power life
test evaluation was done as verification.
operates at 1.9 GHz with 90 Watts of output power. Similar
devices operate between 1.8 to 2.1 GHz with 90 Watts of
output power.
MOUNTING METHOD
solder mount assembly line with device leads solder–attached
to a PCB and the flange bolted to a copper pallet with thermal
compound on the interface. The pallets were bolted to
fan–cooled, finned aluminum heatsinks with thermal
MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION
REV 0
Figure 2. MRF19090 90–Watt Power Device Board
This application note describes a mounting method for a
Figure 1 shows an MRF19090 power transistor. This device
Assemblies of the new design were built in an automated
Motorola, Inc. 2001
Construction
This mounting methodology is
compound on the interface. Power life testing was done at a
specific duty cycle and heatsink temperature. Assembly
construction of a pallet with this device is shown in Figure 2.
Configuration of the pallets onto the aluminum chassis is
shown in Figure 3.
Figure 3. Full Assembly of Power Life Test
Figure 1. MRF19090 Power Transistor
Order this document
by AN1923/D
1

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AN1923 Summary of contents

Page 1

... Figure 1. MRF19090 Power Transistor compound on the interface. Power life testing was done at a specific duty cycle and heatsink temperature. Assembly construction of a pallet with this device is shown in Figure 2. Configuration of the pallets onto the aluminum chassis is shown in Figure 3. Figure 3. Full Assembly of Power Life Test by AN1923/D 1 ...

Page 2

ASSEMBLY A challenging aspect of high volume manufacturing of any component in a board assembly involves the stackup tolerance of the completed system. tolerances for the seating plane height of the component are 0.005 . Achievable tolerance of the PCB ...

Page 3

Prior to proceeding with assembly of the PCB necessary to ensure that the level of gold within the solder joint does not exceed 4% by volume. One way to accomplish this is to solder dip the leads into ...

Page 4

Figure 8. Process Flow for Board Assembly 4 MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION ...

Page 5

RESULTS The assemblies were cycled under DC conditions at 26 Volts and 135 Watts of dissipated power Watts of RF output power at 40% efficiency the dissipated power is 135 Watts. A peak case temperature of more than ...

Page 6

Lead and solder joint temperatures were measured on several PCBs using a scanning Infrared microscope after the power cycling. Lead temperatures were found to be approximately 100 C at 135 Watts of power dissipation and sink temperature. ...

Page 7

MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION NOTES 7 ...

Page 8

... ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ 8 are registered trademarks of Motorola, Inc. Motorola, Inc Equal MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION AN1923/D ...

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