DS1135 Dallas Semiconductor, DS1135 Datasheet - Page 5

• Manufacturer Part Number: DS1135
• Description: 3-in-1 High-Speed Silicon Delay Line
• Manufacturer: Dallas Semiconductor

TEST CONDITIONS
Ambient Temperature: 25 C =3 C
Supply Voltage (V
Input Pulse:
Source Impedance: 50 =Max.
Rise and Fall Time: 3.0 ns Max. - Measured between 0.6V and 2.4V.
Pulse Width: 500 ns
Pulse Period: 1 s
Output Load Capacitance: 15 pF
Output:
NOTE:
The above conditions are for test only and do not restrict the devices under other data sheet conditions.
TIMING DIAGRAM
NOTES:
1. All voltages are referenced to ground.
2. Pulse width and duty cycle specifications may be exceeded, however, accuracy will be application
3. Power-up time is the time from the application of power to the time stable delays are being produced
sensitive with respect to decoupling, layout, etc.
at the output.
OUT
IN
High: 3.0V =0.1V
Low: 0.0V =0.1V
Each output is loaded with the equivalent of one 74F04 input gate.
Data is measured at the 1.5V level on the rising and falling edges.
t
80%
20%
RISE
CC
): 5.0V =0.1V
1.5V
t
PLH
t
WI
1.5V
1.5V
t
OR
t
1.5V
PHL
t
FALL
5 of 6
PERIOD
t
OF
t
WI
1.5V