RF5176 RF Micro Devices, RF5176 Datasheet

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RF5176

Manufacturer Part Number
RF5176
Description
3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER
Manufacturer
RF Micro Devices
Datasheet
Product Description
The RF5176 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 3V
CDMA-2000 and W-CDMA handsets as well as other
applications in the 1850MHz to 2000MHz band. The
device is self-contained, and the output can be easily
matched to obtain optimum power, efficiency, and linear-
ity characteristics over all recommended supply voltages.
The device has a continuously variable bias circuit to
allow idle current to be optimized for a given output
power.
Optimum Technology Matching® Applied
Rev A0 010910
Typical Applications
• 3V 1850-1910MHz CDMA-2000 Handsets
• 3V 1920-1980MHz W-CDMA Handsets
• Spread-Spectrum Systems
Si BJT
Si Bi-CMOS
BIAS GND
VCC BIAS
VREG1
VREG2
VS2
Functional Block Diagram
1
2
3
4
5
ü
20
6
GaAs HBT
SiGe HBT
19
7
18
2
8
Preliminary
17
9
GaAs MESFET
Si CMOS
16
10
15
14
13
12
11
VCC1
VCC1
NC
NC
NC
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 3V Supply
• 27dBm Linear Output Power
• 26dB Linear Gain
• 40% Linear Efficiency
• On-board Power Down Mode
RF5176
RF5176 PCBA
MAX
12°
NOTES:
1
2
3
4
5
Shaded lead is Pin 1.
Pin 1 identifier must exist on top surface of package by identification
mark or feature on the package body. Exact shape and size is optional.
Package Warpage: 0.05 mm max.
Die Thickness Allowable: 0.305 mm max.
Dimension applies to plated terminal: to be measured between 0.02 mm
and 0.25 mm from terminal end.
Dimensions in mm.
Package Style: LCC, 20-Pin, 4x4
1.00
0.90
0.05
3V LINEAR POWER AMPLIFIER
3V W-CDMA POWER 1900MHZ/
3V W-CDMA Power 1900MHZ/ 3V Linear Power
Amplifier
Fully Assembled Evaluation Board
3 0.20
0.75
0.50
0.60
0.24 typ
Note orientation of package.
0.50
4.00
sq.
RF5176
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
4 PLCS
0.23
0.13
2.10
sq.
4 PLCS
0.65
0.30
2-197
2

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RF5176 Summary of contents

Page 1

... CDMA-2000 Handsets • 3V 1920-1980MHz W-CDMA Handsets • Spread-Spectrum Systems Product Description The RF5176 is a high-power, high-efficiency linear ampli- fier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero- junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 and W-CDMA handsets as well as other applications in the 1850MHz to 2000MHz band ...

Page 2

... RF5176 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (P 31dBm) OUT Bias Voltage (V ) BIAS Control Voltage (V ) REG 2 Input RF Power Operating Case Temperature Storage Temperature Parameter Overall Usable Frequency Range Typical Frequency Range Linear Gain Second Harmonic (including second harmonic trap) ...

Page 3

... Base multiple vias. The pad should have a short thermal path to the ground plane. Rev A0 010910 and V may be adjusted to minimize idle current for REG2 voltages can be used as REG voltages can be used as defined on the appli- REG RF5176 Interface Schematic and and 2-199 2 ...

Page 4

... RF5176 2 360 k VREG R8 240 k 240 k R7 240 k VCC BIAS 100 REG V BIAS = 3 4 mils R Alternative Biasing Networks for Various V V (V) R5 (1ST) k REG 2.50 2.60 2.70 2.80 2.90 2-200 Application Schematic RF IN 100 nF 1 ...

Page 5

... W = 0.028" 0.060" 0.028" 0.060" C12 W = 0.028" 3 0.120" C13 OUT RF5176 VCC CON1 VREG CON1 VCCBIAS CON1 P4 1 GND L4 CON1 C11 ...

Page 6

... RF5176 Board Thickness 0.028”, Board Material FR-4, Multi-Layer 2 2-202 Evaluation Board Layout Board Size 2.0" x 2.0" Ground Plane at 0.014” Preliminary Rev A0 010910 ...

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