FSS923A0D1 Intersil Corporation, FSS923A0D1 Datasheet - Page 3

• Manufacturer Part Number: FSS923A0D1
• Description: 7A/ -200V/ 0.650 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

Source to Drain Diode Specifications
Electrical Specifications up to 100K RAD
NOTES:
Single Event Effects (SEB, SEGR)
NOTES:
Typical Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
Forward Voltage
Reverse Recovery Time
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate-Body Leakage
Zero-Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
Single Event Effects Safe Operating Area
1. Pulse test, 300 s Max.
2. Absolute value.
3. In situ Gamma bias must be sampled for both V
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
-200
-160
-120
-80
-40
0
0
PARAMETER
TEMP = 25
TEST
FLUENCE = 1E5 IONS/cm
5
PARAMETER
LET = 26MeV/mg/cm
LET = 37MeV/mg/cm
o
C
2
(typical), T = 25
10
4-3
V
GS
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
(V)
SYMBOL
15
V
2
2
, RANGE = 43
, RANGE = 36
t
SD
rr
o
2
(Note 4)
C.
SYMBOL
(TYPICAL)
SEESOA
Unless Otherwise Specified
GS
FSS923A0D, FSS923A0R
20
I
I
SD
SD
= -12V, V
T
C
= 7A
= 7A, dI
= 25
r
SYMBOL
V
DS(ON)12
V
BV
TEST CONDITIONS
GS(TH)
DS(ON)
SPECIES
I
I
GSS
DSS
o
25
DSS
C, Unless Otherwise Specified
DS
ION
SD
Br
Br
Br
Br
Ni
= 0V and V
/dt = 100A/ s
ENVIRONMENT (NOTE 5)
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
TEST CONDITIONS
= 0, I
= V
= 20V, V
= 0, V
= -12V, I
= -12V, I
GS
TYPICAL LET
(MeV/mg/cm)
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
DS
1E-3
1E-4
1E-5
1E-6
1E-7
= 0V, V
D
DS
, I
26
37
37
37
37
= 1mA
-10
D
D
D
= -160V
DS
= 1mA
= 7A
= 4A
DS
= 0V
GAMMA DOT CURRENT TO I
= 80% BV
MIN
-0.6
-
-30
RANGE ( )
TYPICAL
DSS
43
36
36
36
36
DRAIN SUPPLY (V)
-200
MIN
-2.0
.
TYP
-
-
-
-
-
-
-100
V
APPLIED
GS
(V)
20
10
15
20
0.650
MAX
5
MAX
-6.0
100
-5.0
BIAS
-1.8
220
25
-
AS
-300
ILM = 10A
300A
V
100A
30A
MAXIMUM
DS
(NOTE 6)
UNITS
UNITS
BIAS (V)
-200
-200
-160
-100
-40
nA
ns
V
V
V
V
A
-1000