TPCP8101 Toshiba Semiconductor, TPCP8101 Datasheet - Page 4

• Manufacturer Part Number: TPCP8101
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

−10
100
0.1
−5
−4
−3
−2
−1
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
−4.5
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−5
Drain−source voltage V
Gate−source voltage V
−0.2
−0.5
Ta = 25°C
−2.5
Drain current I
Ta = 100°C
−1
−4
−1.9
−0.4
−1.0
Ta = 25°C
−3
I
I
|Y
D
D
Ta = −55°C
−2
fs
Ta = 100°C
– V
– V
| – I
−1.8
DS
GS
−0.6
−1.5
D
D
Common source
Ta = 25°C Pulse test
−10
Ta = −55°C
GS
(A)
DS
V GS = −1.4 V
−0.8
−2.0
(V)
(V)
−1.7
−1.6
−1.5
−100
−1.0
−2.5
4
－0.5
－0.4
－0.3
－0.2
－0.1
1000
−10
100
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
Common source
Ta = 25°C
Pulse test
−2.5
Drain−source voltage V
Gate−source voltage V
−4
−3
－2
−1
−5
−2
Drain current I
−1
R
V
−2
－4
DS (ON)
−1.8 V
I
DS
D
– V
– V
V GS = −4.5 V
DS
GS
– I
−3
－6
D
−2.5 V
Common source
Ta = 25°C Pulse test
D
−10
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GS
(A)
DS
V GS = −1.4 V
Common source
Ta = 25°C
Pulse test
−4
(V)
(V)
－8
TPCP8101
−1.8
−1.7
−1.6
−1.5
I
D
I
2006-11-17
−1.9
=－5.6A
－2.8A
－1.4A
−100
−5
－10