TPCF8101 Toshiba Semiconductor, TPCF8101 Datasheet - Page 2

• Manufacturer Part Number: TPCF8101
• Description: Notebook PC Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
R
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
I
I
C
|Y
C
C
Q
Q
GSS
DSS
V
t
t
Q
on
off
oss
t
rss
t
iss
gs
gd
I
th
fs
r
f
g
DR
|
= −6.0 A, V
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
D
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −6.0 A
GS
2
(Ta = 25°C)
= −12 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±8 V, V
= −1.8 V, I
= −2.5 V, I
= −4.5 V, I
∼ − −10 V, V
−5 V
Test Condition
GS
0 V
= 0 V
Test Condition
⎯
w
DS
= 10 μs
D
D
GS
GS
D
D
D
GS
GS
GS
= −200 μA
= −3.0 A
= −1.5 A
= −3.0 A
= −3.0 A
= 0 V
= 0 V
= 8 V
= 0 V
= 0 V, f = 1 MHz
= −5 V,
I
V
D
DD
= −3.0 A
∼ − −6 V
V
OUT
−0.5
−12
Min
Min
−4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
1600
Typ.
Typ.
18.0
14.5
260
335
3.5
60
32
22
14
13
21
68
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
www.DataSheet4U.com
TPCF8101
2006-11-16
Max
−1.2
Max
−24
±10
−10
1.2
85
40
28
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
S
V