TPC8216-H Toshiba Semiconductor, TPC8216-H Datasheet - Page 5

• Manufacturer Part Number: TPC8216-H
• Description: High-Efficiency DC/DC Converter Applications
• Manufacturer: Toshiba Semiconductor

10000
1000
100
1.6
0.8
1.2
0.4
30
25
20
10
15
10
5
0
−80
2
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = 4.5 V
(1)
(2)
(3)
(4)
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
Device mounted on a Glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
t=10s
V GS = 10 V
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
Capacitance – V
0
1
R
DS (ON)
P
D
100
I D = 1.6,3.2,6.4 A
40
– Ta
– Ta
I D = 1.6,3.2,6.4 A
80
10
DS
DS
C oss
C iss
C rss
150
(V)
120
160
100
200
5
100
0.1
2.5
1.5
0.5
50
40
30
10
10
20
−80
0
1
3
2
1
0
0
0
Common source
V DS = 10 V
I D = 0.1 mA
Pulse test
Common source
Ta = 25°C
Pulse test
V DS = 24 V
12
6
10
2
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Total Gate charge Q
4
Dynamic input/output
−0.4
0
characteristics
4.5
6
I
DR
V
th
−0.6
3
– V
40
8
– Ta
DS
V DD = 24 V
6
10
−0.8
80
g
Common source
I D = 6.4 A
Ta = 25°C
Pulse test
DS
1
V GS
12
(nC)
12
V GS = 0 V
−1.0
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(V)
TPC8216-H
120
14
2009-02-23
−1.2
160
16
20
16
12
4
0
8