TPC8121 Toshiba Semiconductor, TPC8121 Datasheet

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TPC8121

Manufacturer Part Number
TPC8121
Description
Field Effect Transistor Silicon P Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPC8121
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Notebook PC Applications
Lithium Ion Battery Applications
Portable Equipment Applications
Absolute Maximum Ratings
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
Drain power dissipation (t = 10 s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Small footprint due to small and thin package
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Note: Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS V)
(Note 2a) (Note 4)
GS
DC
Pulse (Note 1)
= 20 kΩ)
DSS
th
(Note 2a)
(Note 2b)
= −0.8 to −2.0 V (V
(Note 1)
(Note 3)
= −10 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
| = 23 S (typ.)
AS
AR
stg
D
ch
D
D
TPC8121
= 8.0 mΩ (typ.)
DS
DS
= −10 V, I
= −30 V)
−55 to 150
Rating
0.030
−30
−30
±20
−11
−44
−11
150
1.9
1.0
82
1
D
= −1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
www.DataSheet4U.com
7
2
2-6J1B
6
3
2009-09-29
TPC8121
5
4
Unit: mm

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TPC8121 Summary of contents

Page 1

... V V GSS − − − 0.030 150 °C ch −55 to 150 T °C stg 1 TPC8121 www.DataSheet4U.com Unit: mm ⎯ JEDEC ⎯ JEITA TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 2009-09-29 ...

Page 2

... January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm Ω TPC8121 www.DataSheet4U.com FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) = −11 A 2009-09-29 ...

Page 3

... GS = − gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = − DSF TPC8121 www.DataSheet4U.com Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ − −30 ⎯ ⎯ −13 ⎯ ⎯ −0.8 ⎯ ...

Page 4

... Gate−source voltage V 100 Common source Ta = 25°C Pulse test 10 1 −100 −0.1 Drain current I 4 TPC8121 www.DataSheet4U.com I – −3.7 −4 −3.5 −3.3 − −2.7V Common source Ta = 25°C Pulse test −0.8 −1.2 −1.6 − ...

Page 5

... Ambient temperature Ta ( − −24 V −25 − −15 −12 −10 −6 −5 0 200 Total gate charge Q 5 TPC8121 www.DataSheet4U.com I – −5 −4 −3 − Common source Ta = 25°C Pulse test 0.3 0.6 0.9 1.2 ( – ...

Page 6

... Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max −0.1 −0.1 −1 −10 Drain−source voltage V (V) DS − 0 100 Pulse width t (s) w −100 6 TPC8121 www.DataSheet4U.com (2) (2) (1) (1) Single pulse Single pulse 1000 2009-09-29 ...

Page 7

... Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8121 www.DataSheet4U.com 2009-09-29 ...

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