TPC8110 Toshiba Semiconductor, TPC8110 Datasheet - Page 5

• Manufacturer Part Number: TPC8110
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
• Manufacturer: Toshiba Semiconductor

10000
5000
3000
1000
500
300
100
2.0
1.6
1.2
0.8
0.4
50
40
30
20
10
50
30
−0.1
0
−80
0
0
Common source
Pulse test
(1)
(2)
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = −4 V
25
−40
−0.3
Drain-source voltage V
Ambient temperature Tc (°C)
−10 V
Case temperature Tc (°C)
−0.5
50
Capacitance – V
0
R
−1
DS (ON)
75
P
D
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
40
– Tc
I D = 8.0 A
−3
100
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
– Tc
I D = −2.0/−4.0/−8.0 A
−5
80
DS
DS
125
−10
−2.0/−4.0 A
(V)
120
150
−30
C oss
C rss
C iss
−50
175
160
5
−100
−0.1
−1.6
−1.2
−0.8
−0.4
−10
−40
−30
−20
−10
−1
−2
−80
0
0
0
0
V DS
Dynamic Input/Output Characteristics
−40
−10
Drain-source voltage V
Case temperature Tc (°C)
Total gate charge Q
0.4
20
V GS
−3
0
−1
I
DR
V
th
0.8
– V
40
40
V GS = 0 V, 1 V
– Tc
−5
DS
g
−8
80
V DD = 32 V
DS
Common source
Ta = 25°C
Pulse test
Common source
I D = −10 A
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −1 mA
Pulse test
(nC)
1.2
80
(V)
120
−16
2002-05-24
TPC8110
160
1.6
80
−40
−30
−20
−10
0