TPC6105 Toshiba Semiconductor, TPC6105 Datasheet - Page 2

• Manufacturer Part Number: TPC6105
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
R
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
I
I
C
|Y
C
C
Q
GSS
Q
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
I
th
fs
r
f
g
DR
|
= −2.7 A, V
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
D
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −2.7 A
GS
2
(Ta = 25°C)
= −20 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±8 V, V
= −1.8 V, I
= −2.5 V, I
= −4.5 V, I
∼ − −16 V, V
−5 V
Test Condition
GS
0 V
= 0 V
Test Condition
w
—
DS
D
D
= 10 µs
GS
GS
D
D
D
GS
GS
GS
= −200 µA
= −1.4 A
= −0.7 A
= −1.4 A
= −1.4 A
= 0 V
= 0 V
= 8 V
= 0 V
= 0 V, f = 1 MHz
= −5 V,
V
I
D
DD
= −1.4 A
∼ − −10 V
V
OUT
−0.5
Min
Min
−20
−12
2.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
—
—
Typ.
Typ.
215
110
470
4.7
⎯
⎯
⎯
⎯
⎯
72
70
80
26
—
—
5
9
8
6
4
2
www.DataSheet4U.com
2004-07-01
TPC6105
−10.8
Max
−1.2
Max
±10
−10
300
160
110
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V