TPC6003 Toshiba Semiconductor, TPC6003 Datasheet

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TPC6003

Manufacturer Part Number
TPC6003
Description
Silicon N Channel MOS Type (U-MOSIII)
Manufacturer
Toshiba Semiconductor
Datasheet

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Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to ambient
(t = 5 s)
Thermal resistance, channel to ambient
(t = 5 s)
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Characteristics
GS
= 20 kΩ)
DSS
th
DC
Pulse
= 1.3 to 2.5 V (V
(Note 2a)
(Note 2b)
(Note 1)
(Note 1)
(Note 4)
(t = 5 s)
(t = 5 s)
= 10 µA (max) (V
(Note 2a)
(Note 2b)
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
P
P
DSS
GSS
I
DP
AR
| = 7 S (typ.)
stg
AS
AR
D
ch
TPC6003
D
D
DS
= 19 mΩ (typ.)
R
R
DS
Symbol
= 10 V, I
th (ch-a)
th (ch-a)
= 30 V)
−55 to 150
Rating
0.22
±20
150
D
2.2
0.7
5.8
30
30
24
6
3
1
= 1 mA)
178.5
56.8
Max
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.011 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
6
1
5
2
2-3T1A
2007-01-15
TPC6003
www.DataSheet4U.com
4
3
Unit: mm

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TPC6003 Summary of contents

Page 1

... 150 °C ch −55 to 150 T °C stg Symbol Max Unit R 56.8 °C/W th (ch-a) R 178.5 °C/W th (ch-a) 1 TPC6003 www.DataSheet4U.com Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration 2007-01-15 ...

Page 2

... off Duty < µ ∼ − TPC6003 www.DataSheet4U.com Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ µA 10 ⎯ ⎯ ⎯ ⎯ 15 ⎯ 1.3 2.5 V ⎯ ...

Page 3

... Note 5: • on lower left of the marking indicates Pin 1. . (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF DR GS (b) Device mounted on a glass-epoxy board (b) FR-4 2510 ms Ω 3 TPC6003 www.DataSheet4U.com Min Typ. Max Unit ⎯ ⎯ ⎯ ⎯ −1.2 V FR-4 25.4 × 25.4 × 0.8 Unit: (mm) (b) 2007-01-15 ...

Page 4

... Gate-source voltage (ON) 100 4 0.1 0.3 1 100 Drain current I D (A) 4 TPC6003 www.DataSheet4U.com – 2.8 2.7 2.6 2 2.4 V Common source Ta = 25°C Pulse test – Common source Ta = 25°C Pulse test ...

Page 5

... 25°C 40 Pulse test 160 Total gate charge Q g (nC) 5 TPC6003 www.DataSheet4U.com – Common source Ta = 25°C Pulse test −1.2 −1.6 −2.0 – Ta Common source Pulse test 40 80 ...

Page 6

... Single nonrepetitive pulse Ta = 25°C V DSS max 0.003 Curves must be derated linearly with increase in temperature 0.001 0.01 0.03 0.1 0 Drain-source voltage V DS (V) − Device mounted on a glass- epoxy board (a) (Note 2a) Single pulse 0 100 Pulse t w (s) 100 6 TPC6003 www.DataSheet4U.com 1000 2007-01-15 ...

Page 7

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 TPC6003 www.DataSheet4U.com 030619EAA 2007-01-15 ...

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