TPC6002 Toshiba Semiconductor, TPC6002 Datasheet - Page 3

• Manufacturer Part Number: TPC6002
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

100
12
10
50
30
10
5
4
3
2
1
0
8
6
4
2
0
5
3
1
0
0
1
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
0.5
0.1
Drain-source voltage V
Gate-source voltage V
3
10
1
Drain current I
0.2
4
I
I
1.5
|Y
D
D
fs
– V
– V
10
| – I
25°C
GS
DS
2
D
0.3
100°C
3.2
100°C
Ta = -55°C
25°C
D
GS
Common source
Ta = 25°C
Pulse test
DS
(A)
2.5
30
V GS = 2.5 V
(V)
(V)
0.4
Ta = -55°C
3
3
2.7
2.6
2.8
100
0.5
3.5
3
100
0.6
0.5
0.4
0.3
0.2
0.1
10
50
30
10
8
6
4
2
0
0
0.1
0
0
Common source
Ta = 25°C
Pulse test
0.3
4
3.4
Drain-source voltage V
1
1.5 A
2
Gate-source voltage V
10, 8, 6
Drain current I
1
R
V
DS (ON)
2
4
I
DS
D
– V
3
– V
DS
GS
3 A
– I
3
6
D
Common source
Ta = 25°C Pulse test
D
10
GS
DS
Common source
Ta = 25°C
Pulse test
(A)
I D = 6 A
V GS = 4.5 V
V GS = 2.5 V
(V)
(V)
4
8
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10 V
30
3.2
2001-11-07
TPC6002
3.1
2.9
2.7
3
100
10
5