BYQ30ED Philips Semiconductors, BYQ30ED Datasheet - Page 2

• Manufacturer Part Number: BYQ30ED
• Description: Rectifier diodes ultrafast/ rugged
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ESD LIMITING VALUE
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
October 1997
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
V
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
V
I
j
SYMBOL PARAMETER
Q
t
I
V
R
rr
rrm
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
C
F
fr
th j-mb
th j-a
s
Electrostatic discharge
capacitor voltage
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Forward voltage (per diode)
Reverse current (per diode)
Reverse recovery charge (per
diode)
Reverse recovery time (per
diode)
Peak reverse recovery current
(per diode)
Forward recovery voltage (per
diode)
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 k
CONDITIONS
per diode
both diodes conducting
minimum footprint, FR4 board
CONDITIONS
I
I
I
V
V
CONDITIONS
I
I
-dI
I
-dI
I
F
F
F
F
F
F
F
R
R
= 8 A; T
= 16 A; T
= 16 A;
= 2 A; V
= 1 A; V
= 1 A; V
= 1 A; dI
F
F
= V
= V
/dt = 100 A/ s
/dt = 50 A/ s; T
RWM
RWM
; T
j
R
R
R
F
2
= 150˚C
j
/dt = 10 A/ s
= 150˚C
j
= 100 ˚C
30 V; -dI
30 V;
30 V;
j
= 100 ˚C
F
/dt = 20 A/ s
MIN.
MIN.
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
BYQ30ED series
TYP.
TYP.
TYP.
0.83
0.98
1.0
0.3
1.0
50
20
2
4
1
-
-
Product specification
MAX.
MAX.
MAX.
MAX.
8
0.95
1.15
1.25
3.0
2.5
0.6
30
11
25
2
-
-
Rev 1.000
UNIT
UNIT
UNIT
UNIT
K/W
K/W
K/W
mA
nC
kV
ns
V
V
A
V
A