83C151SB Intel Corporation, 83C151SB Datasheet - Page 28

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83C151SB

Manufacturer Part Number
83C151SB
Description
HIGH-PERFORMANCE CHMOS MICROCONTROLLER
Manufacturer
Intel Corporation
Datasheet
8XC151SA SB HIGH-PERFORMANCE CHMOS MICROCONTROLLER
PROGRAMMING AND VERIFYING
NONVOLATILE MEMORY
The 87C151SA SB has several areas of nonvolatile
memory that can be programmed and or verified
on-chip code memory (8 16 Kbytes) lock bits (3
bits) encryption array (128 bytes) and signature
bytes (3 bytes)
Figure 16 shows the setup for programming and or
verifying the nonvolatile memory Table 11 lists the
programming and verification operations and indi-
cates which operations apply to the different ver-
sions of the 87C151SA SB It also specifies the sig-
nals on the programming input (PROG ) and the
ports The ROM OTPROM mode (port 0) specifies
the operation (program or verify) and the base ad-
dress of the memory area The addresses (ports 1
and 3) are relative to the base address (On-chip
memory for a 16-Kbyte ROM OTPROM device is lo-
cated at address range 0000H – 3FFFH The other
areas of the ROM OTPROM are outside the memo-
ry address space and are accessible only during pro-
gramming and verification )
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Information in Figures 17 and 18 define the configu-
ration bits Figure 19 shows the waveforms for the
programming and verification cycles and Table 12
lists the timing specifications The signature bytes of
the
87C151SA SB OTPROM versions are factory pro-
grammed Table 13 lists the addresses and the con-
tents of the signature bytes
Factory-programmed ROM and OTPROM versions
of 8XC151SA SB use configuration byte information
supplied in a separate hexadecimal disk file
8XC151SA SB
ROM OTPROM arrays fetch configuration byte in-
formation from external application memory based
on an internal address range of FFF9 8H
The V
lated and free of glitches The voltage on the V
pin must not exceed the specified maximum
even under transient conditions
83C151SA SB
PP
source in Figure 16 must be well regu-
devices
NOTE
ROM
versions
without
and
internal
PP
the

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