RN49J2FS TOSHIBA Semiconductor CORPORATION, RN49J2FS Datasheet - Page 3

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RN49J2FS

Manufacturer Part Number
RN49J2FS
Description
Toshiba Transistor Silicon Npn?pnp Epitaxial Type Pct Process Bias Resistor Built-in Transistor
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Input resistor
Resistor ratio
Characteristics
Characteristics
Characteristics
(Ta =25°C) (Q1)
(Ta =25°C) (Q2)
(Ta =25°C) (Q1, Q2 common)
V
V
V
V
Symbol
Symbol
Symbol
V
V
R1/R2
CE (sat)
CE (sat)
I
I
I
I
I
I (OFF)
I
I (OFF)
CBO
CEO
h
I (ON)
C
CBO
CEO
h
I (ON)
C
EBO
EBO
R1
FE
FE
ob
ob
V
V
V
V
I
V
V
V
V
V
V
V
I
V
V
V
C
C
CB
CE
EB
CE
CE
CE
CB
CB
CE
EB
CE
CE
CE
CB
= −5 mA, I
= 5 mA, I
3
= −10 V, I
= 10 V, I
= −20 V, I
= −20 V, I
= −5 V, I
= −0.2 V, I
= −5 V, I
= −10 V, I
= 20 V, I
= 20 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
Test Condition
Test Condition
Test Condition
B
C
C
B
C
C
E
B
C
E
= 0.25 mA
C
= 10 mA
= 0.1 mA
C
E
B
E
= −0.25 mA
C
= 0
= 0
= 0
= 0, f = 1 MHz
= −10 mA
= −0.1 mA
= 5 mA
= 0
= 0
= 0
= 0, f = 1 MHz
= −5 mA
−0.088
0.088
−1.2
−0.8
37.6
Min
120
Min
120
Min
1.2
0.8
0.8
Typ.
Typ.
Typ.
1.2
1.2
1.0
47
RN49J2FS
−0.133
2009-04-23
−0.15
0.133
−100
−500
−3.6
−1.5
0.15
56.4
Max
Max
Max
100
500
3.6
1.5
1.2
Unit
Unit
Unit
mA
mA
nA
pF
nA
pF
V
V
V
V
V
V

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