RN4993FS TOSHIBA Semiconductor CORPORATION, RN4993FS Datasheet - Page 3

• Manufacturer Part Number: RN4993FS
• Description: Toshiba Transistor Silicon Npn?pnp Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Input resistor
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Characteristics
Characteristics
Characteristics
(Ta = 25°C) (Q1)
(Ta = 25°C) (Q2)
(Ta = 25°C) (Q1, Q2 common)
V
V
Symbol
Symbol
Symbol
CE (sat)
CE (sat)
I
I
I
I
C
C
CBO
EBO
h
CBO
EBO
h
R1
FE
FE
ob
ob
V
V
V
I
V
V
V
V
I
V
C
C
CB
EB
CE
CB
CB
EB
CE
CB
= 5 mA, I
= −5 mA, I
3
= 20 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= −20 V, I
= −5 V, I
= −5 V, I
= −10 V, I
Test Condition
Test Condition
Test Condition
B
C
C
B
C
C
E
E
= 0.25 mA
= 0
= 1 mA
E
E
= −0.25 mA
= 0
= 0, f = 1 MHz
= 0
= −1 mA
= 0
= 0, f = 1 MHz
⎯
37.6
Min
300
Min
300
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
Typ.
1.2
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
47
RN4993FS
2004-06-30
−0.15
−100
−100
Max
0.15
Max
Max
56.4
100
100
⎯
⎯
⎯
⎯
Unit
Unit
Unit
kΩ
nA
nA
pF
nA
nA
pF
V
V