BCR8PM-14LA Renesas Electronics Corporation., BCR8PM-14LA Datasheet - Page 2

• Manufacturer Part Number: BCR8PM-14LA
• Description: Triac Medium Power Use
• Manufacturer: Renesas Electronics Corporation.

1. Junction temperature
2. Rate of decay of on-state commutating current
3. Peak off-state voltage
BCR8PM-14LA
Electrical Characteristics
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
R07DS0141EJ0200 Rev.2.00
Sep 16, 2010
Tj = 125C
(di/dt)c = – 4.0 A/ms
V
D
= 400 V
3. The contact thermal resistance R
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (I
Parameter
Note2
Note2
Note4
Test conditions
GT




 20 mA) is also available. (I


Symbol
(dv/dt)c
V
R
V
I
V
I
I
I
RGT 
V
V
RGT 
FGT 
RGT 
DRM
th (j-c)
FGT 
RGT 
TM
GD
th (c-f)
in case of greasing is 0.5°C/W.
Min.
0.2
10
—
—
—
—
—
—
—
—
—
GT
Typ.
item: 1)
—
—
—
—
—
—
—
—
—
—
—
Commutating voltage and current waveforms
30
30
30
Max.
2.0
1.6
1.5
1.5
1.5
3.7
—
—
Note5
Note5
Note5
Supply Voltage
Main Voltage
Main Current
C/W
V/s
Unit
mA
mA
mA
mA
(inductive load)
(dv/dt)c
V
V
V
V
V
Tj = 125C, V
Tc = 25C, I
Instantaneous measurement
Tj = 25C, V
R
Tj = 25C, V
R
Tj = 125C, V
Junction to case
Tj = 125C
G
G
= 330 
= 330 
Test conditions
(di/dt)c
TM
D
D
DRM
D
= 6 V, R
= 6 V, R
Time
Time
Time
= 12 A,
V
= 1/2 V
D
Note3
Preliminary
applied
Page 2 of 7
L
L
DRM
= 6 ,
= 6 ,