BCR8PM-12LD Renesas Electronics Corporation., BCR8PM-12LD Datasheet - Page 3
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BCR8PM-12LD
Manufacturer Part Number
BCR8PM-12LD
Description
Triac Medium Power Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.BCR8PM-12LD.pdf
(8 pages)
BCR8PM-12LD
Performance Curves
REJ03G1564-0100
Page 3 of 7
10
10
10
10
10
10
10
10
10
10
10
-1
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
3
2
1
-1
7
5
3
2
7
5
3
2
7
5
3
2
10
2
1
0
-60 -40 -20 0
0.6
Maximum On-State Characteristics
1
Gate Characteristics (I, II and III)
Tj = 25°C
V
V
2 3
1.0
GM
GT
Junction Temperature (°C)
Rev.1.00
= 10 V
= 1.5 V
Gate Trigger Voltage vs.
Junction Temperature
On-State Voltage (V)
1.4
5 7
Gate Current (mA)
10
20 40 60 80 100 120 140 160
1.8
I
I
I
2
FGT I
RGT II
RGT III
2 3
P
Jul 06, 2007
G(AV)
2.2
5 7
Typical Example
= 0.5 W
2.6
10
3
3.0
V
P
2 3
GD
GM
I
GM
= 0.2 V
=5 W
3.4
= 2 A
5 7
3.8
10
4
10
10
10
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
Maximum Transient Thermal Impedance
0
7
5
3
2
7
5
3
2
3
2
1
10
10
-60 -40 -20
10
Conduction Time (Cycles at 60 Hz)
Conduction Time (Cycles at 60 Hz)
–1
0
2
Characteristics (Junction to case)
Rated Surge On-State Current
I
FGTI
Junction Temperature (°C)
2 3
Gate Trigger Current vs.
Junction Temperature
0
I
RGTIII
10
10
5 7
20 40 60 80 100 120 140 160
0
3
10
1
Typical Example
I
RGTI
10
10
2 3
4
1
5 7 10
10
2
2