K3699 Sanyo Semicon Device, K3699 Datasheet - Page 3

• Manufacturer Part Number: K3699
• Description: Search -----> 2SK3699
• Manufacturer: Sanyo Semicon Device

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2SK3699-01MR
10
10
10
10
10
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-3
0
3
2
1
0
10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
-50
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
-1
td(on)
td(off)
-25
tf
tr
10
0
0
25
VDS [V]
ID [A]
10
Tch [ C]
10
50
0
max.
min.
1
75
100
10
Crss
Ciss
125
Coss
2
150
10
1
0.1
14
12
10
350
300
250
200
150
100
10
8
6
4
2
0
50
1
0.00
0
0
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3.7A,Tch=25 C
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
0
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
I
I
AS
I
AS
AS
=3A
=3.7A
=2A
0.25
25
5
0.50
50
starting Tch [ C]
10
FUJI POWER MOSFET
Qg [nC]
VSD [V]
Vcc= 180V
720V
0.75
75
450V
15
1.00
100
20
1.25
125
1.50
25
150
3