K3662 Toshiba Semiconductor, K3662 Datasheet

K3662

Manufacturer Part Number

K3662

Description

Search -----> 2SK3662

Manufacturer

Toshiba Semiconductor

Datasheet

1.K3662.pdf (6 pages)

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Switching Regulator, DC−DC Converter, Motor Drive

Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode : V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1:

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Ensure that the channel temperature does not exceed 150°C.

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)

= 25 V, T

Characteristics

Pulse (Note 1)

= 20 kΩ)

DSS

= 25°C (initial), L = 227 μH, I

(Note 2)

(Note 3)

= 1.3 to 2.5 V (V

(Note 1)

= 100 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 55 S (typ.)

stg

2SK3662

= 9.4 mΩ (typ.)

Symbol

th (ch−a)

th (ch−c)

= 10 V, I

= 60 V)

−55 to 150

Rating

±20

105

204

150

3.5

= 1 mA)

= 35 A, R

3.57

62.5

Max

°C/ W

Unit

°C

= 25 Ω

Weight: 1.9 g (typ.)

JEDEC

JEITA

TOSHIBA

2-10R1B

SC-67

2006-11-17

―

2SK3662

Unit: mm

Related parts for K3662

K3662 Summary of contents

Page 1

... AR E 3.5 AR (Note 3) T 150 ch −55 to 150 T stg Symbol Max R 3.57 th (ch−c) R 62.5 th (ch−a) = 25°C (initial 227 μ Unit JEDEC ― mJ JEITA SC-67 A TOSHIBA 2-10R1B Weight: 1.9 g (typ.) mJ °C °C Unit °C/ W ° Ω G 2006-11-17 2SK3662 Unit: mm ...

Page 2

... V, ⎯ 70 ⎯ 21 Min Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 60 ⎯ 58 2006-11-17 2SK3662 Max Unit ±10 μA μA 100 ⎯ V ⎯ 2 mΩ 12.5 ⎯ S ⎯ ⎯ pF ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ...

Page 3

... 1.0 Common source Tc = 25°C Pulse test 0.8 0 Gate-source voltage V ( – (ON Common source Tc = 25°C 30 Pulse test Drain current I (A) D 2SK3662 100 2006-11-17 ...

Page 4

... Case temperature Tc (°C) Dynamic input/output characteristics 80 Common source 25°C Pulse test 120 Total gate charge Q (nC) g 2SK3662 −1.4 −1.6 160 160 2006-11-17 ...

Page 5

... V DSS max 10 100 ( − Ω 227 μ 2SK3662 Duty = t (ch-c) = 3.57°C – 100 125 Channel temperature (initial) T (° VDSS ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3662 20070701-EN 2006-11-17 ...

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