IRH8450 International Rectifier, IRH8450 Datasheet - Page 12

• Manufacturer Part Number: IRH8450
• Description: (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
• Manufacturer: International Rectifier

Case Outline and Dimensions — TO-204AE
IRH7450, IRH8450 Devices
12
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]
V DD = 25V, Starting T J = 25°C,
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
Peak I L = 11A, L>7.4mH R G =25
I SD
V DD
Suggested RG =2.35
Pulse width
See Figures 18 through 30 for pre-irradiation
curves
11A, di/dt
BV DSS , T J
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: [phone]
300 s; Duty Cycle
120A/ s,
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]
150°C
http://www.irf.com/
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
Conforms to JEDEC Outline TO-204AE
Dimensions in Millimeters and ( Inches )
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
2%
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Data and specifications subject to change without notice.
Total Dose Irradiation with V GS Bias.
12 volt V GS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, codition A.
Total Dose Irradiation with V DS Bias.
V DS = 0.8 rated BV DSS (pre-radiation)
applied and V GS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Pre-Irradiation
www.irf.com
10/98