MRF6S9045 Freescale Semiconductor, MRF6S9045 Datasheet - Page 8

• Manufacturer Part Number: MRF6S9045
• Description: RF Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor

MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
8
Figure 13. MTTF Factor versus Junction Temperature
24
23
22
21
20
19
18
17
16
23.5
22.5
21.5
20.5
19.5
18.5
17.5
10
10
10
10
23
22
21
20
19
18
9
8
7
6
90
1
0
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
Figure 11. Power Gain and Drain Efficiency
V
T
Figure 12. Power Gain versus Output Power
η
DD
100
C
D
25_C
= −30_C
10
= 12 V
TYPICAL CHARACTERISTICS
110
20
P
versus CW Output Power
120
T
out
16 V
P
85_C
J
out
, JUNCTION TEMPERATURE (°C)
, OUTPUT POWER (WATTS) CW
D
2
, OUTPUT POWER (WATTS) CW
30
for MTTF in a particular application.
130
G
20 V
ps
140
40
10
150
50
V
I
f = 880 MHz
DQ
DD
24 V
160
= 350 mA
= 28 Vdc
60
170
28 V
70
−30_C
180
80
I
f = 880 MHz
190
DQ
= 350 mA
100
85_C
25_C
200
90
32 V
2
210
100
80
70
60
50
40
30
20
10
0
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RF Device Data