AT-32063 Agilent(Hewlett-Packard), AT-32063 Datasheet - Page 2

• Manufacturer Part Number: AT-32063
• Description: Low Current/ High Performance NPN Silicon Bipolar Transistor
• Manufacturer: Agilent(Hewlett-Packard)

TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK ( = 4.3)
DIMENSIONS IN MILS
NOT TO SCALE
AT-32063 Absolute Maximum Ratings
Electrical Specifications, T
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB;
Symbol
50
Symbol
NF
G
h
I
I
output loss = 0.3 dB.
CBO
EBO
V
V
V
FE
T
A
P
T
I
EBO
CBO
CEO
STG
C
T
j
W = 10
L = 450
Noise Figure; V
Associated Gain; V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Noise Figure; V
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
CE
EB
Parameters and Test Conditions
= 2.7 V, I
= 1 V
CE
= 2.7 V, I
[2,3]
A
= 25 C
C
CB
= 5 mA
W = 20
L = 60
= 3 V
C
= 5 mA
CE
Units
mW
mA
= 2.7 V, I
V
V
V
C
C
[1]
4-64
W = 10
L = 100
C
Maximum
Absolute
-65 to 150
= 5 mA
150
150
1.5
5.5
11
40
50
f = 0.9 GHz
f = 0.9 GHz
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 2.7 mW/ C for T
4. 150 mW per device.
any of these limits are exceeded.
Mounting Surface
Units
Thermal Resistance
dB
dB
—
A
A
jc
12.5
= 370 C/W
Min.
50
= 25 C.
[2]
14.5
Typ. Max.
1.1
[2]
C
[2]
> 94.5 C.
[2]
1.4
270
:
0.2
1.5
[2]