AT-32011 Agilent(Hewlett-Packard), AT-32011 Datasheet - Page 2

• Manufacturer Part Number: AT-32011
• Description: Low Current/ High Performance NPN Silicon Bipolar Transistor
• Manufacturer: Agilent(Hewlett-Packard)

AT-32011, AT-32033 Absolute Maximum Ratings
Electrical Specifications, T
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
1000 pF
Symbol
RF IN
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 ( = 4.8)
DIMENSIONS IN MILS
Symbol
output loss = 0.3 dB.
output loss = 0.3 dB.
I
I
V
V
V
NF
T
G
h
CBO
EBO
P
EBO
CBO
CEO
I
T
STG
FE
A
C
T
j
W = 10
CKT A: L = 380
CKT B: L = 380
V
BB
Noise Figure
Associated Gain
Forward Current Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
V
V
Parameters and Test Conditions
CE
CE
CE
CB
EB
W = 10 L = 1870
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
= 3 V
= 2.7 V, I
= 2.7 V, I
= 2.7 V, I
= 1 V
Parameter
C
C
C
= 2 mA
= 2 mA
= 2 mA
W = 30
L = 60
[2, 3]
A
= 25 C
f = 0.9 GHz
f = 0.9 GHz
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
W = 30
L = 60
Units
mW
mA
V
V
V
C
C
W = 10 L = 1870
4-54
Units
NOT TO SCALE
dB
dB
–
A
A
Maximum
Absolute
-65 to 150
V
200
150
12.5
W = 10
CKT A: L = 105
CKT B: L = 850
1.5
5.5
CC
11
32
Min.
70
CKT A: 25
CKT B: 5
[1]
[1]
AT-32011
Typ.
1.0
14
1000 pF
[1]
[1]
RF OUT
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. T
3. Derate at 1.82 mW/ C for T
Mounting Surface
Max.
1.3
300
0.2
1.5
Thermal Resistance
[1]
jc
Min.
11
= 550 C/W
70
= 25 C.
[2]
AT-32033
12.5
Typ.
1.0
[2]
C
[2]
> 40 C.
[2]
Max.
1.3
:
300
0.2
1.5
[2]