AT-31033 Agilent(Hewlett-Packard), AT-31033 Datasheet - Page 3

• Manufacturer Part Number: AT-31033
• Description: Low Current/ High Performance NPN Silicon Bipolar Transistor
• Manufacturer: Agilent(Hewlett-Packard)

Characterization Information, T
Figure 2. AT-31011 and AT-31033
Minimum Noise Figure and Amplifier
NF
V
Figure 5. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
CE
Symbol
including circuit losses.
2.5
1.5
0.5
[1]
|S
10
G
P
= 2.7 V.
C
2
1
0
8
6
4
2
0
IP
21
0
1dB
0
1dB
CB
vs. Frequency and Current at
|
3
E
2
NF MIN.
0.5
0.5
10 mA
5 mA
2 mA
FREQUENCY (GHz)
FREQUENCY (GHz)
Power at 1 dB Gain Compression (opt tuning)
V
Gain at 1 dB Gain Compression (opt tuning)
V
Output Third Order Intercept Point,
V
Gain in 50
Collector-Base Capacitance
CE
CE
CE
1.0
1
AMPLIFIER NF
= 2.7 V, I
= 2.7 V, I
= 2.7 V, I
1.5
1.5
2 mA
5 mA
10 mA
1 mA
10 mA
C
C
C
CE
System; V
2.0
2
= 10 mA
= 10 mA
Parameters and Test Conditions
= 10 mA (opt tuning)
= 2.7 V.
2.5
2.5
CE
= 2.7 V, I
Figure 3. AT-31011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
Figure 6. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
25
20
15
10
20
16
12
5
0
= 2.7 V.
8
4
0
A
0
0
= 25
C
0.5
= 1 mA
0.5
FREQUENCY (GHz)
FREQUENCY (GHz)
1 mA
1.0
1.0
C
CE
4-35
= 2.7 V.
V
10 mA
CB
1.5
1.5
= 3V, f = 1 MHz
2 mA
5 mA
10 mA
2.0
2.0
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
2.5
2.5
Figure 4. AT-31033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
Figure 7. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V
Units
CE
dBm
dBm
dB
dB
16
12
pF
25
20
15
10
8
4
0
= 2.7 V.
5
0
0
0
0.5
0.5
AT-31011 AT-31033
FREQUENCY (GHz)
FREQUENCY (GHz)
Typ
0.04
1 mA
1.0
15
20
10
1.0
9
CE
10 mA
= 2.7 V.
1.5
1.5
2 mA
5 mA
10 mA
2.0
2.0
Typ
0.04
13
20
9
9
2.5
2.5