G4BC30UD International Rectifier, G4BC30UD Datasheet - Page 2

• Manufacturer Part Number: G4BC30UD
• Description: Search -----> IRG4BC30UD
• Manufacturer: International Rectifier

IRG4BC30UD
Electrical Characteristics @ T
Switching Characteristics @ T
V
∆V
V
V
∆V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
GES
CES
d(on)
d(off)
f
d(on)
d(off)
f
rr
r
r
rr
fe
E
on
off
ts
ts
(BR)CES
CE(on)
GE(th)
oes
FM
ies
res
g
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/∆T
/∆T
J
J
Gate - Emitter Charge (turn-on)
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage ----
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
----
----
----
3.0
3.1
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
---- 1100 ----
----
----
----
----
----
----
----
----
----
----
0.63
1.95
2.52
2.09
0.38
0.16
0.54
0.89
120
180
220
180
120
---- 2500
---- ±100
-11
8.6
1.4
1.3
8.1
7.5
3.5
5.6
----
----
----
50
18
40
21
91
80
40
22
73
14
42
80
80
250
140
130
120
180
600
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
2.1
6.0
1.7
1.6
0.9
----
6.0
---- mV/°C V
75
12
27
60
10
V/°C
A/µs T
nA
µA
nC
mJ
mJ
nH
nC
V
V
ns
ns
pF
ns
V
S
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 23A
= 12A, T
= 12A
= 12A, T
= 12A
= 12A
= 25°C
= 12A, V
= 12A, V
= 150°C,
= 25°C See Fig.
= 125°C
= 25°C See Fig.
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= 400V
= 15V
= 15V, R
= 15V, R
= ±20V
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
= 150°C
C
C
= 150°C
See Fig.
Conditions
Conditions
= 1.0mA
See Fig.
= 250µA
G
G
C
= 250µA
= 250µA
= 480V
See Fig. 9, 10, 11, 18
= 480V
= 600V
= 600V, T
= 23Ω
= 23Ω
= 12A
14
15
17
16
See Fig. 8
www.irf.com
See Fig. 7
See Fig. 2, 5
See Fig. 13
V
di/dt 200A/µs
J
GE
I
V
= 150°C
F
R
= 12A
= 15V
= 200V