G4BC20UD International Rectifier, G4BC20UD Datasheet
G4BC20UD
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G4BC20UD Summary of contents
Page 1
... Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight PD 91449B IRG4BC20UD UltraFast CoPack IGBT 600V CES = 1.85V V CE(on) typ ...
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... IRG4BC20UD Electrical Characteristics @ T V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) www.DataSheet4U.com V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage ---- GE(th) J Forward Transconductance Zero Gate Voltage Collector Current ...
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... T = 150° 15V G E 20µs PULSE WIDTH IRG4BC20UD ° ° riv ifie los ffe ...
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... IRG4BC20UD www.DataSheet4U.com ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature 0. . Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 2 ...
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... sista Ω) Resistance IRG4BC20UD Fig ...
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... IRG4BC20UD 1 Ω ° 0.9 www.DataSheet4U.com 0.6 0.3 0 lle cto r- itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ...
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... . /µ / 4 / /µs) f /dt f IRG4BC20UD ° ° 4 / /µs) f Fig ...
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... IRG4BC20UD www.DataSheet4U.com 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Same ty pe device as D .U.T. 430µ . ...
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... D.U. 480V IRG4BC20UD 480V @25° ...
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... IRG4BC20UD Q Repetitive rating: V (figure 20 =80%(V CC CES S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. www.DataSheet4U.com (. (. (. (. (. (. (. ...