2SJ684 Sanyo Semicon Device, 2SJ684 Datasheet - Page 4

• Manufacturer Part Number: 2SJ684
• Description: P-Channel Silicon MOSFET General-Purpose Switching Device Applications
• Manufacturer: Sanyo Semicon Device

--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
60
50
40
30
20
10
0
0
Note on usage : Since the 2SJ684 is a MOSFET product, please avoid using this device in the vicinity
0
0
V DS = --100V
I D = --45A
This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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above.
20
50
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
100
of highly charged objects.
60
V GS -- Qg
P D -- Ta
150
80
100
200
120
250
140
IT13316
IT13307
300
160
2SJ684
--100
--1.0
--0.1
--10
120
100
80
60
40
20
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
--0.1
0
0
I DP = --180A
I D = --45A
Tc=25 ° C
Single pulse
Operation in this area
is limited by R DS (on).
2
25
3
Drain-to-Source Voltage, V DS -- V
5 7
Ambient Temperature, Ta -- °C
50
--1.0
E AS -- Ta
2
75
A S O
3
5 7 --10
100
www.DataSheet4U.com
2
125
≤10μs
PS
3
No. A1058-4/4
5 7
150
--100
IT10478
IT13317
175
2