2SJ483 Hitachi Semiconductor, 2SJ483 Datasheet

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2SJ483

Manufacturer Part Number
2SJ483
Description
Silicon P Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet
Features
Outline
Low on-resistance
R
4V gate drive devices.
Large current capacitance
I
D
DS(on)
= –5 A
= 0.08 typ (at V
G
GS
TO-92MOD.
High Speed Power Switching
Silicon P Channel MOS FET
= –10 V, I
D
S
D
= –2.5 A)
2SJ483
3
2
1
1. Source
2. Drain
3. Gate
ADE-208-519
1st. Edition

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2SJ483 Summary of contents

Page 1

... Silicon P Channel MOS FET High Speed Power Switching Features Low on-resistance R = 0.08 typ ( – DS(on gate drive devices. Large current capacitance I = – Outline TO-92MOD. G 2SJ483 = –2 Source Drain 1 3. Gate S ADE-208-519 1st. Edition ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current I Channel dissipation Channel temperature Storage temperature Note duty cycle 2 Symbol Ratings V –30 DSS V 20 GSS I – ...

Page 3

... V — –1.0 — — 60 — rr 2SJ483 Unit Test Conditions –10mA 100 – 16V –1mA –2. – ...

Page 4

... Main Characteristics Power vs. Temperature Derating 1.6 1.2 0.8 0 100 Ambient Temperature Typical Output Characteristics –10 V –6 V –10 –5 V –4 V –8 –3.5 V –6 –4 –2 0 –2 –4 Drain to Source Voltage 4 –100 –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 150 200 –0.01 –0.03 –0.1 –0.3 – – ...

Page 5

... V (V) GS Forward Transfer Admittance vs Pulse Test – 0.5 120 160 –0.1 –0 2SJ483 vs. Drain Current V = – –10 V –1 –3 –10 –30 –100 Drain Current I (A) D Drain Current = – – –0.5 –1 – ...

Page 6

... Body to Drain Diode Reverse Recovery Time 500 200 100 –0.1 –0.2 –0.5 –1 Reverse Drain Current Dynamic Input Characteristics –5V DD –10 V –25 V –10 – – – –40 –10 V –5 V – ...

Page 7

... Source to Drain Voltage Switching Time Test Circuit Vout Vin Monitor Monitor D.U. Vin –10 V – –5 V Pulse Test –0.8 –1.2 –1.6 –2.0 V (V) SD Switching Time Waveforms Vin 10% 90% 10% Vout td(on) tr 2SJ483 90% 90% 10% td(off ...

Page 8

... Package Dimensions 5.2 max 0.70 max 0.75 max 0.60 max 0.55 max 1.27 2.54 8 4.2 max 0.5 max Hitachi Code EIAJ JEDEC Unit: mm TO–92Mod. SC–51 — ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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