2SJ401 Toshiba Semiconductor, 2SJ401 Datasheet

2SJ401

Manufacturer Part Number

2SJ401

Description

P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Manufacturer

Toshiba Semiconductor

Datasheets

1.2SJ401.pdf (6 pages)

2.2SJ401.pdf (5 pages)

3.2SJ401.pdf (5 pages)

4.2SJ401.pdf (5 pages)

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DC−DC Converter, Relay Drive and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalenche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

temperature

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L

= −20 A

= −50 V, T

Pulse (Note 1)

= 20 kΩ)

: V

DSS

(Note 1)

(Note 2)

= 25°C (initial), L = 1.44 mH, R

= −0.8~−2.0 V (V

= −100 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−c)

th (ch−a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SJ401

| = 20 S (typ.)

= −10 V, I

= 33 mΩ (typ.)

−55~150

Rating

= −60 V)

Max

1.25

83.3

−60

±20

−20

−80

100

800

−20

150

= 25 Ω,

= −1 mA)

°C / W

Unit

°C

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

−π−MOSV)

2-10S1B

2-10S2B

2006-11-16

―

2SJ401

Unit: mm

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