TDA8261TW Philips Semiconductors, TDA8261TW Datasheet - Page 11

• Manufacturer Part Number: TDA8261TW
• Description: Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
V
2004 Dec 02
Supply
V
I
V
Performances from pins RFA or RFB to pins IBBOUT or QBBOUT
LO
G
V
IP2i
IP3i
F
Z
Z
G
Pulling sensitivity
3/4LO
5/4LO
VCO and synthesizer
f
MDR
amb
CC
osc
o(p-p)
G
o
i
n(osc)
n
CC
POR
o(p-p)
Satellite Zero-IF QPSK/8PSK
downconverter with PLL synthesizer
v(max)
v(I-Q)
SYMBOL
leak
v
= 25 C; V
= 750 mV on IBBOUT and QBBOUT.
CC
supply voltage
supply current
voltage limit where POR active
LO leakage through pins RFA
and RFB
dynamic voltage gain range
maximum voltage gain
output voltage (peak-to-peak)
2nd-order interception point
3rd-order interception point
noise figure
output impedance on pin IOUT
and QOUT
input impedance on pin IBBIN
and QBBIN
voltage gain mismatch between
I and Q
absolute quadrature error
sensitivity to pulling on the third
harmonic of the external VCO
sensitivity to pulling on the fifth
harmonic of the external VCO
oscillator frequency
oscillator phase noise in the
satellite band
phase noise on baseband
outputs
main divider ratio
= 5 V; unless otherwise specified; R
PARAMETER
V
V
see Figs 4 and 5
recommended value
at RF input; V
at RF input; V
at maximum gain;
V
in 22.5 MHz band with
bypass capacity 100 nF
between IOUT and IBBIN,
QOUT and QBBIN
V
V
peak value); measured in
baseband
see Table 9 and Fig.8
see Table 9 and Fig.8
f
PLL loop bandwidth
f
f
offset
offset
COMP
AGC
AGC
AGC
AGC
o
= 750 mV (peak to
L
= 1 k on base band output IBBOUT and QBBOUT;
= 100 kHz; out of
= 1 and 10 kHz;
= 0 to 3 V
= 3 V;
= 3 V; see Fig.6
= 1.5 V;
CONDITIONS
= 1 MHz; see Fig.7
11
AGC
AGC
= 0 V
= 0 V
4.75
48
55
950
64
MIN.
5.00
130
2.7
50
57
750
19
14
18
35
1.0
0
75
40
40
100
TYP.
TDA8261TW
Product specification
5.25
1
3
2175
32767
35
35
94
78
MAX.
V
mA
V
dBm
dB
dB
mV
dBm
dBm
dB
k
dB
deg
dBc
dBc
MHz
dBc/Hz
dBc/Hz
UNIT