MCP3909 Microchip Technology, MCP3909 Datasheet - Page 2

• Manufacturer Part Number: MCP3909
• Description: Energy Metering IC with SPI Interface and Active Power Pulse Output
• Manufacturer: Microchip Technology

MCP3909
1.0
Absolute Maximum Ratings †
V
Digital inputs and outputs w.r.t. A
Analog input w.r.t. A
V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-65°C to +125°C
Soldering temperature of leads (10 seconds) ............. +300°C
ESD on the analog inputs (HBM,MM) .................4.0 kV, 400V
ESD on all other pins (HBM,MM) ........................4.0 kV, 400V
DS22025A-page 2
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all parameters apply at AV
Internal V
Active Power Measurement Accuracy
Active Energy Measurement
Error
No-Load Threshold/
Minimum Load
System Gain Error
AC Power Supply Rejection
(output frequency variation)
DC Power Supply Rejection
(output frequency
variation)
Waveform Sampling
A/D Converter Signal-to-
Noise and Distortion Ratio
Bandwidth
(Notch Frequency)
Phase Delay Between
Channels
Note 1:
DD
REF
...................................................................................7.0V
input w.r.t. A
2:
3:
4:
5:
6:
7:
ELECTRICAL
CHARACTERISTICS
Parameter
REF
Measurement error = (Energy Measured By Device - True Energy)/True Energy * 100%. Accuracy is
measured with signal (±660 mV) on Channel 1. F
See typical performance curves for higher frequencies and increased dynamic range.
Does not include internal V
measured output frequency and expected transfer function.
Percent of HF
CH2 = 100 mV
Error applies down to 60 degree lead (PF = 0.5 capacitive) and 60 degree lag (PF = 0.5 inductive).
Refer to Section 4.0 “Device Overview” for complete description.
Specified by characterization, not production tested.
1 MCLK period at 3.58 MHz is equivalent to less than <0.005 degrees at 50 or 60 Hz.
, HPF turned on (AC mode), A
GND
GND
............................... -0.6V to V
..................................... ....-6V to +6V
OUT
RMS
GND
output frequency variation; Includes external V
@ 50 Hz, AV
DC PSRR
AC PSRR
........ -0.6V to V
SINAD
Sym
NLT
E
REF
. Gain = 1, CH0 = 470 mVDC, CH1 = 660 mVDC, difference between
GND
DD
Min
—
—
—
—
—
—
—
—
DD
DD
= 5V + 1V
, D
+0.6V
+0.6V
GND
0.0015
Typ.
0.01
0.01
0.1
81
14
—
1
= 0V, MCLK = 3.58 MHz; T
pp
@ 100 Hz. DC PSRR: 5V ±500 mV
OUT0
1/MCLK
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
Max
—
—
—
—
—
—
5
, F
OUT1
% F
% F
% F
% F
% F
Units
pulse outputs. Valid from 45 Hz to 75 Hz.
Max
kHz
dB
s
OUT
OUT
OUT
OUT
OUT
REF
= 2.5V, CH1 = 100 mV
Channel 0 swings 1000:1 range,
F
only, does not apply to serial inter-
face data. (Note 1, Note 4)
Frequency outputs only, does not
apply to serial interface data.
Disabled when F2, F1, F0 = 0, 1, 1
(Note 5, Note 6)
(Note 2, Note 5)
F2, F1, F0 = 0, 1, 1 (Note 3)
HPF = 1, Gain = 1 (Note 3)
Applies to both channels,
V
(V
Applies to both channels,
MCLK/256
HPF = 0 and 1, < 1 MCLK period
(Note 4, Note 6, Note 7)
A
DD
OUT0
IN
= -40°C to +85°C.
IN
= DV
= 0 dBFS at 50 Hz
= Full Scale)
© 2006 Microchip Technology Inc.
, F
DD
OUT1
= 4.5V to 5.5V,
Comment
Frequency outputs
RMS
@ 50 Hz,