MCP1726T-3002E/SN Microchip Technology, MCP1726T-3002E/SN Datasheet - Page 20

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MCP1726T-3002E/SN

Manufacturer Part Number
MCP1726T-3002E/SN
Description
1A Low Voltage Low lq LDO, -40C to +125C, 8-SOIC 150mil, T/R
Manufacturer
Microchip Technology
Datasheet
MCP1726
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below:
As you can see from the result, this application will be
operating very near the maximum operating junction
temperature of 125°C. The PCB layout for this
application is very important as it has a significant
impact on the junction-to-ambient thermal resistance
(Rθ
in this application.
Maximum Package Power Dissipation at
70°C Ambient Temperature
From this table you can see the difference in maximum
allowable power dissipation between the 3x3 DFN
package and the 8-pin SOIC package. This difference
is due to the exposed metal tab on the bottom of the
DFN package. The exposed tab of the DFN package
provides a very good thermal path from the die of the
LDO to the PCB. The PCB then acts like a heatsink,
providing more area to distribute the heat generated by
the LDO.
DS21936C-page 20
3x3 DFN (41° C/W Rθ
8LD SOIC (150°C/Watt Rθ
JA
P
P
P
P
) of the 3x3 DFN package, which is very important
D(MAX)
D(MAX)
D(MAX)
D(MAX)
T
T
T
= (125°C – 70°C) / 41° C/W
= 1.34W
= (125°C – 70°C)/ 150° C/W
= 0.366W
J
J
J
=
=
=
JA
)
T
48.8°C + 70.0°C
118.8°C
JRISE
JA
)
+ T
A(MAX)
© 2007 Microchip Technology Inc.

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