ZXMP6A17G Zetex Semiconductors, ZXMP6A17G Datasheet - Page 4

• Manufacturer Part Number: ZXMP6A17G
• Description: P-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ZXMP6A17G
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1)(3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
300µ s. Duty cycle
A
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
4
MIN.
-60
-1.0
TYP.
4.7
637
70
53
2.6
3.4
26.2
11.3
9.8
17.7
1.6
4.4
-0.85
25.1
27.2
2% .
MAX. UNIT CONDITIONS
-1
100
0.125
0.190
-0.95
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=-250µA, V
=-250 A, V
=-2.2A
=-2.2A
GS
=25 C, I
=25 C, I
=-60V, V
=-15V,I
=-30V, V
=-30V,V
=-30V,V
=-10V, I
=-4.5V, I
=0V
=-30V, I
= 20V, V
6.0 , V
ISSUE 1 - MAY 2005
S
F
D
=-1.7A,
=-2A,
D
GS
GS
GS
=-2.2A
D
GS
D
GS
=-2.2A
GS
DS
=-1A
=-1.8A
DS
=-5V,
=-10V,
=-10V
=0V
=0V,
=0V
= V
=0V
GS