ZXMN6A25DN8 Zetex Semiconductors, ZXMN6A25DN8 Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A25DN8
• Description: DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN6A25DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
(at T
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
2% .
= 25°C unless otherwise stated).
4
MIN.
1.0
60
TYP.
1063
10.2
26.2
10.6
11.0
20.4
0.85
22.0
21.4
104
3.8
4.0
4.1
5.1
64
PROVISIONAL ISSUE B - JUNE 2003
MAX. UNIT CONDITIONS
0.055
0.075
0.95
100
1.0
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=250 A, V
=250 A, V
=4.5A
=4.5A
GS
=25°C, I
=25°C, I
=60V, V
=10V, I
=4.5V, I
=15V,I
=30V,V
=30V,V
=0V
6.0 , V
=30V, I
= 20V, V
30V
,
V
D
S
F
D
GS
GS
=2.2A,
GS
GS
=4.5A
D
=5.5A,
GS
D
=3.6A
GS
DS
=1A
=3A
=5V,
=10V,
DS
=0V,
=10V
=0V
=0V
= V
=0V
GS