ZXMN6A09G Zetex Semiconductors, ZXMN6A09G Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A09G
• Description: 60V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN6A09G
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
S E M I C O N D U C T O R S
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
(at T
4
60
1.0
A
= 25°C unless otherwise stated).
TYP.
15
1407
121
59
4.9
5.0
25.3
4.6
12.4
24.2
5.2
3.5
0.85
26.3
26.6
PROVISIONAL ISSUE D - SEPTEMBER 2003
MAX.
1
100
0.045
0.070
0.95
UNIT CONDITIONS
V
µA
nA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
I
V
V
I
V
V
V
V
f=1MHz
V
R
(refer to test
circuit)
V
I
V
I
T
V
T
di/dt= 100A/µs
D
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
=3.5A
=3.5A
=250µA, V
=250µA, V
=25°C, I
=25°C, I
≅6.0Ω, V
=60V, V
=±20V, V
=10V, I
=4.5V, I
=15V,I
=40 V, V
=15V,V
=15V,V
=0V
=15V, I
D
S
F
D
GS
GS
=3.5A,
GS
=6.6A,
GS
DS
D
=8.2A
D
GS
=8.2A
GS
DS
=3.5A
=7.4A
=5V,
=10V,
= V
=10V
=0V
=0V
=0V,
=0V
GS